by Ben | Jul 16, 2021 | Front Page, Gallium Nitride, GaNFast Technology, Press Release
Long partnership with strong technical support drives 30% shrink using next-generation gallium nitride (GaN) power ICs DUBLIN, IRELAND — (PRWeb) Navitas Semiconductor, the industry leader in gallium nitride (GaN) power ICs, announced that Xiaomi has launched their...
by Ben | Jun 14, 2021 | Front Page, GaNFast Technology, Press Release
GaNFast™ power ICs leverage benchmark performance and reliability in mobile fast charging to enable next-generation capabilities in higher-power consumer, data center, EV and solar markets. DUBLIN, IRELAND — (PRWeb) Navitas Semiconductor announced that the company...
by Ben | May 20, 2021 | Front Page, GaNFast Technology, Press Release
World’s first gallium nitride (GaN) fast Charger with Qualcomm QC 5 DUBLIN, IRELAND — (PRWeb) Navitas Semiconductor announced that the world’s first charger with Qualcomm® Quick Charge™ 5 Technology fast-charging protocol was launched by Baseus, featuring Navitas’...
by Ben | Apr 30, 2021 | Front Page, GaNFast Technology, Press Release
Gallium nitride (GaN) power ICs replace silicon in world’s smallest 65W Dual USB-C fast charger DUBLIN, IRELAND — (PRWeb) Navitas Semiconductor announced that the Lenovo laptops Xiaoxin Air 14, Air 15, Pro 16 plus the YOGA Duet and YOGA 5G were officially launched on...
by Ben | Mar 15, 2021 | Front Page, GaNFast Technology
Xiaomi’s First In-box GaNFast Charger is a World-Class Charging Experience. DUBLIN, IRELAND — (PRWeb) – Navitas Semiconductor Limited today announced that its gallium nitride (GaN) power ICs are being used in the Xiaomi 55W fast charger (model MDY-12-EQ),...
